New Structure and Manufacturing Process for Silicon Solar Cells

Web Published:
11/29/2011
Description:

            Researchers at Princeton have developed a new method of fabrication of silicon solar cells that enhances efficiency, does not require high-temperature heating in ultra-clean furnaces, and allows processing in a continuous, rather than a batch process.  Princeton is currently seeking an industrial partner to commercialize this technology.

 

                Under this new process, a silicon base layer can be coated with organic materials and the electrodes can be directly deposited.  A thin film silicon in roll form can be used as a base layer, allowing manufacture to take place in a continuous manner.  

 

Another aspect of the new method addresses the problem of minority carrier recombination at silicon surfaces and metal contacts which greatly reduces the efficiency of photovoltaic devices.  Princeton researchers have demonstrated the use of an organic compound and method that provides a novel way to passivate the defects at silicon surfaces.  The method does not use any exotic materials and employs known laboratory methods.

 

It is anticipated that this process will lower costs significantly as high temperature furnaces and clean rooms will no longer be required in the manufacturing process. It provides a route for low-cost passivation of a silicon surface, as well as a route towards wide-bandgap heterojunction on silicon and wide-band contacts, and a low cost high quality p-n junction on silicon.

 

            Patent protection is pending.

 

            For more information please contact:

                        William H. Gowen

                        Office of Technology Licensing and Intellectual Property

                        Princeton University

                        4 New South Building

                        Princeton, NJ 08544-0036

                        (609) 258-6762

                        (609) 258-1159 fax

                        wgowen@princeton.edu

 

Patent Information:
For Information, Contact:
William Gowen
Former: Sr. Licensing Assoc.
Princeton University
wgowen2@outlook.com
Inventors:
Sushobhan Avasthi
James Sturm
Keywords: