Novel Method For Making Complementary Metal-Oxide-Silicon (CMOS) Circuits

Researchers at Princeton University led by Professor Sigurd Wagner have developed a novel technology to make CMOS circuits utilizing process temperatures below 320^O C .  Princeton is currently seeking industrial collaborators to commercialize this technology.

State of the art CMOS processing techniques require process temperatures above 600^O C because that is the lowest temperature at which polycrystalline films can be made by thermal crystallization.  The Princeton invention allows for the manufacture of such circuits at temperature almost 300^O C lower.

It is expected that the utilization of this technology will further broaden the use of CMOS circuits, which are the building blocks of digital electronics. Applications include large-area electronic products as well as in the fabrication of aplication-specific crystalline IC¿s (ASIC¿s), which require process temperatures of below 400^O C.

Patent protection is pending.

For more information please contact:

                        William H. Gowen

                        Office of Technology Licensing and Intellectual Property

                        Princeton University

                        4 New South Building

                        Princeton, NJ 08544-0036

                        (609) 258-6762

                        (609) 258-1159 fax

                        wgowen@princeton.edu