Method for Self-Repair of Defects in Nano-Structures

Web Published:

            Researchers at Princeton University have developed a new method for repairing and thereby reducing defects in a patterned nanoscale device by liquifying the patterned device in the presence of appropriate guiding conditions for a period of time and then permitting the device to re-solidify.


The performance of such nanoscale devices typically depends on the shapes and dimensions of their structures, and they are typically designed with precise shapes and dimensions to perform a desired function. They are fabricated by one of a variety of techniques such as lithography, etching, material deposition and imprinting. However, these fabrication techniques are not precise at the nanoscale level. They have intrinsic defects due to the statistical nature of each processes and extrinsic defects due to fabrication environment (such as dust particles).  As a consequence, the devices often deviate from the desired design due to geometrical (topological) defects, structural defects or both. Typical geometrical defects include edge roughness, deviation from straight or circular edges, deviation from planarity and sidewalls that are not vertical. Typical structural defects include crystal defects, grain boundaries and material property deterioration. As the size of the devices becomes smaller, these defects increasingly degrade device performance.


It is anticipated that this new technology will be useful in the field of high density semiconductor integrated circuits and  in wide variety of electronic, optical, magnetic, mechanical and biological devices.


Patent protection has been granted under US # 7,282,456.


For more information please contact:


                        William H. Gowen

                        Office of Technology Licensing and Intellectual Property

                        Princeton University

                        4 New South Building

                        Princeton, NJ 08544-0036

                        (609) 258-6762

                        (609) 258-1159 fax


Patent Information:
For Information, Contact:
William Gowen
Licensing Associate
Princeton University
Stephen Chou
Qiangfei Xia